re v f e ? x x x x o r m a a b d g d d a s r r p j u s * l v . date: 12- m e atures drain-sou r low gate c low drain - 100% aval a rohs com p r dering i n part nu m smk02 6 a rking in f b solute m d rain-source g ate-source v d rain current d rain current a valanche cu s ingle pulsed r epetitive av a r epetitive av a p ower dissip a u nction tem p s torage temp l imited only m s m 02 y w m a r - 13 s w r ce breakd o c harge: q g = - source on a nche teste p liant devi c n formati o m ber 6 0is f ormatio n m aximu m charact e voltage v oltage (dc) * (pulsed) * rrent (note 2) avalanche e a lanche curr e a lanche ene r a tion p erature erature ran g m aximum jun c m k 60 ww w itchi n o wn voltag e 7nc (typ.) resistance: d c e o n markin g smk026 n m ratings ( e ristic e nergy (note 2 ) e nt (note 1) r gy (note 1) g e c tion temperat u column column 3 e.g.) y w -. y: y -. w w k s n g re g e : bv dss =60 0 r ds(on) =3.9 ? g 0 ( ( t c =25 c unl e ) u re 1, 2: device c 3 : productio n w w y ear code w : week cod e s d-t6q018- 0 g ulat o 0 v (min.) ? package i-pa k ( short lea d e ss otherwis e sym v d s v g s i d t t c i d m i a s e a i a r e a p d t j t s t c ode n information e 0 00 o r app d ) e noted) bol s s s s t c =25 c c =100 c m s s r r d j t g s m adva n licati o rat 6 0 3 2 1. 3 8 2 1 3 2 5. 4 8 1 5 -55 ~ g d s m k0 2 n ced n-ch p o o n ing 0 0 3 0 2 3 5 8 2 3 0 2 6 8 5 0 ~ 150 i-pak www .auk.c o 1 o 2 60i s o wer mosf e unit v v a a a a mj a mj w c c o .kr o f 8 s e t
rev. date: 12-mar- 13 ksd-t6q018-000 www .auk.co.kr 2 of 8 thermal characteristics characteristic symbol rating unit thermal resistance, junction to case r th(j-c) max. 2.6 c/w thermal resistance, junction to ambient r th(j-a) max. 62.5 electrical characteristics (t c =25 c unless otherwise noted) characteristic symbol test condition min. typ. max. unit drain-source breakdown voltage bv dss i d =250ua, v gs =0 600 - - v gate threshold voltage v gs(th) i d =250ua, v ds =v gs 2.0 - 4.0 v drain-source cut-off current i dss v ds =600v, v gs =0v - - 1 ua gate leakage current i gss v ds =0v, v gs = 30v - - 100 na drain-source on-resistance r ds(on) v gs =10v, i d =1a - 3.9 4.7 internal gate resistance r g f=1mhz, v ds =0v - 1.25 6.25 forward transfer conductance (note 3) g fs v ds =10v, i d =1a - 5 - s input capacitance c iss v ds =25v, v gs =0v, f=1mhz - 250 - pf output capacitance c oss - 20 - reverse transfer capacitance c rss - 3.4 - turn-on delay time (note 3,4) t d(on) v dd =300v, i d =2a r g =25 ? - 9 - ns rise time (note 3,4) t r - 25 - turn-off delay time (note 3,4) t d(off) - 24 - fall time (note 3,4) t f - 28 - total gate charge (note 3,4) q g v ds =480v, v gs =10v i d =2a - 7 9.5 nc gate-source charge (note 3,4) q gs - 1.5 - gate-drain charge (note 3,4) q gd - 4.7 - source-drain diode ratings and characteristics (t c =25 c unless otherwise noted) characteristic symbol test condition min. typ. max. unit source current (dc) i s integral reverse diode in the mosfet - - 2 a source current (pulsed) i sm - - 8 a forward voltage v sd v gs =0v, i s =2a - - 1.4 v reverse recovery time (note 3,4) t rr i s =2a, v gs =0v di s /dt=-100a/us - 230 - ns reverse recovery charge (note 3,4) q rr - 1 - uc note: 1. repeated rating: pulse width limited by safe operating area 2. l=59.5mh, i as =2a, v dd =50v, r g =25 , starting t j =25 c 3. pulse test: pulse width 300us, duty cycle 2% 4. essentially independent of operati ng temperature typical characteristics SMK0260IS
rev. date: 12-mar- 13 ksd-t6q018-000 www .auk.co.kr 3 of 8 = - : electrical characteristic curves SMK0260IS fig. 5 capacitance - v ds fig. 1 i d - v ds fig. 4 i s - v sd fig. 3 r ds(on) - i d fig. 6 v gs - q g fig. 2 i d - v gs
rev. date: 12-mar- 13 ksd-t6q018-000 www .auk.co.kr 4 of 8 electrical characteristic curves (continue) SMK0260IS * c c fig. 8 r ds(on) - t j fig. 9 i d - t c fig. 7 v dss - t j fig. 10 safe operating area
rev. date: 12-mar- 13 ksd-t6q018-000 www .auk.co.kr 5 of 8 SMK0260IS fig. 11 gate charge test circuit & waveform fig. 12 resistive switching test circuit & waveform fig. 13 e as test circuit & waveform
rev. date: 12-mar- 13 ksd-t6q018-000 www .auk.co.kr 6 of 8 SMK0260IS fig. 14 diode reverse recovery time test circuit & waveform
rev. date: 12-mar- 13 ksd-t6q018-000 www .auk.co.kr 7 of 8 package outline dimensions SMK0260IS
rev. date: 12-mar- 13 ksd-t6q018-000 www .auk.co.kr 8 of 8 the auk corp. products are intended for the use as components in general electronic equipment (office and communication eq uipment, measuring equipment, home appliance, etc.). please make sure that you consult with us before you use these auk corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion contro l, all types of safety device, etc.). auk corp. cannot accept liability to any damage which may occur in case these auk corp. products were used in the mentioned equipm ents without prior consultation with auk corp.. specifications mentioned in this publicat ion are subject to change without notice. SMK0260IS
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